K4A8G165WC-BCWE

DDR4

K4A8G165WC-BCWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Sample

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K4A8G085WC-BCWE

DDR4

K4A8G085WC-BCWE

DRAM DDR4

SAMSUNG/三星

8Gb

1Gx8

3200Mbps

1.2V

0°C~85°C

FBGA-78

Sample

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MT40A512M16LY-075:E

DDR4

MT40A512M16LY-075:E

DRAM DDR4

MICRON/美光

8Gb

512Mx16

1.14V~1.26V

0°C~95°C

FBGA-96

EOL

D9WFH

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K4A8G085WC-BCTD

DDR4

K4A8G085WC-BCTD

DRAM DDR4

SAMSUNG/三星

8Gb

1Gx8

2666Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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K4A4G165WE-BCRC

DDR4

K4A4G165WE-BCRC

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2400Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A4G085WE-BCRC

DDR4

K4A4G085WE-BCRC

DRAM DDR4

SAMSUNG/三星

4Gb

512Mx8

2400Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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NT5AD512M16C4-HR

DDR4

NT5AD512M16C4-HR

DRAM DDR4

NANYA/南亚

8Gb

x16

2666Mbps

1.2V

0°C~95°C

BGA-96

Developing

7.5mm×13mm×0.8mm

商业级

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NT5AD512M16A4-HR

DDR4

NT5AD512M16A4-HR

DRAM DDR4

NANYA/南亚

8Gb

x16

2666Mbps

1.2V

0°C~95°C

FBGA-96

Mass Production

7.5mm×13mm×0.8mm

商业级

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NT5AD256M16D4-HR

DDR4

NT5AD256M16D4-HR

DRAM DDR4

NANYA/南亚

4Gb

x16

2666Mbps

1.2V

0°C~95°C

TFBGA-96

Developing

7.5mm×13mm×0.8mm

商业级

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K4A4G165WE-BCWE

DDR4

K4A4G165WE-BCWE

DRAM DDR4

SAMSUNG/三星

4Gb

256M x 16

3200 Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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H5ANBG6NAMR-XNC

DDR4

H5ANBG6NAMR-XNC

DRAM DDR4

SK HYNIX/海力士

32Gb

x16

3200Mbps

1.2V

0℃~85℃

FBGA-96

Mass Production

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H5ANAG6NCMR-XNC

DDR4

H5ANAG6NCMR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0℃~85℃

FBGA-96

Mass Production

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M393A2K40DB3-CWE

DDR4

M393A2K40DB3-CWE

DDR4

SAMSUNG三星

16 GB

1R x 4

3200 Mbps

1.2 V

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M471A5244CB0-CWE

DDR4

M471A5244CB0-CWE

DDR4

SAMSUNG三星

4 GB

1R x 16

3200 Mbps

1.2 V

Sample

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H5ANAG6NCMR-VKC

DDR4

H5ANAG6NCMR-VKC

DRAM DDR4

SK HYNIX/海力士

16G

1Gx16

2666Mbps

1.2V

0°C~85°C

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K4A8G165WC-BCTD

DDR4

K4A8G165WC-BCTD

DDR4

SAMSUNG/三星

8 Gb

512M x 16

2666 Mbps

1.2 V

0 ~ 85 °C

96 FBGA

Mass Production

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MTA18ASF4G72PDZ-2G9E1

DDR4

MTA18ASF4G72PDZ-2G9E1

DDR4

MICRON美光

32GB

2G x8

1466MHz

0C to +95C

9.00 x 11.00 x 1.20

End of Life

2933MTPS

CL = 21

MODULE

Industry Speed： PC4-2933

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MTA36ASF4G72PZ-3G2R1

DDR4

MTA36ASF4G72PZ-3G2R1

DDR4

MICRON美光

32GB

2G x4

3200MTPS

0C to +95C

7.50 x 11.00 x 1.20 TFBGA

Production

3200MTPS

CL = 22

MODULE

Speed：1600MHz

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MTA18ASF4G72PDZ-3G2E1

DDR4

MTA18ASF4G72PDZ-3G2E1

DDR4

MICRON美光

32GB

2G x8

1600MHz

0C to +95C

9.00 x 11.00 x 1.20 TFBGA

Obsolete

3200MTPS

CL = 22

MODULE

Voltage: 1.2 VOLTS

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H5ANAG6NDMR-XNC

DDR4

H5ANAG6NDMR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass production

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