K4E6E304ED-EGCG

LPDDR3

K4E6E304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EC-EGCG

LPDDR3

K4E6E304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EB-EGCF

LPDDR3

K4E6E304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

186 Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4B4G1646E-BYK0

LPDDR3

K4B4G1646E-BYK0

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1600Mbps

1.35V

0°C~85°C

FBGA-96

Mass Production

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K4B4G0846E-BYMA

LPDDR3

K4B4G0846E-BYMA

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1866Mbps

1.35V

0°C~85°C

FBGA-78

Mass Production

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NT6CL256T32BM-H2

LPDDR3

NT6CL256T32BM-H2

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1600Mbps

1.2V

-25°C~85°C

BGA-178

Mass Production

10.5mm×11.5mm×0.8mm

商业级

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NT6CL256M32AM-H1

LPDDR3

NT6CL256M32AM-H1

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1866Mbps

1.2V

-35°C~105°C

BGA-178

Developing

10.5mm×11.5mm×0.83mm

商业级

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K4E6E304EC-EGCF

LPDDR3

K4E6E304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

512Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-178

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NT6CL512T32AM-H0

LPDDR3

NT6CL512T32AM-H0

DRAM LPDDR3

NANYA/南亚

16Gb

x32

2133Mbps

1.2V

-30°C~105°C

FBGA-178

Developing

10.5mm×11.5mm×0.83mm

商业级

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H9CCNNNCLGALAR-NVD

LPDDR3

H9CCNNNCLGALAR-NVD

DRAM LPDDR3

SK HYNIX/海力士

32Gb

512Mx32

1066MHz

1.2V

BGA

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H9CCNNNBJTALAR-NUD

LPDDR3

H9CCNNNBJTALAR-NUD

DRAM LPDDR3

SK HYNIX/海力士

16GB

512Mx32

1866MHz

1.2V

FBGA-178

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H9CCNNNCLTCLAR-NUM

LPDDR3

H9CCNNNCLTCLAR-NUM

DRAM LPDDR3

SK HYNIX/海力士

32GB

512Mx32

1866MHz

1.2V

FBGA-178

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H9CCNNN8JTBLAR-NUD

LPDDR3

H9CCNNN8JTBLAR-NUD

DRAM LPDDR3

SK HYNIX/海力士

8GB

256Mx32

933Mbps

1.2V

BGA

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H9CCNNN4GTMLAR

LPDDR3

H9CCNNN4GTMLAR

DRAM LPDDR3

SK HYNIX/海力士

4Gb

x32

1.8V/1.2V/1.2V

FBGA-178

Mass production

Low Power

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H9CCNNNCPTALBR-NUD

LPDDR3

H9CCNNNCPTALBR-NUD

DRAM LPDDR3

SK HYNIX/海力士

BGA

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H9CCNNNBLTALAR

LPDDR3

H9CCNNNBLTALAR

DRAM LPDDR3

SK HYNIX/海力士

16Gb

x32

1.8V/1.2V/1.2V

FBGA-253

Mass production

Low Power

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H9CCNNNBJTALAR-NVD

LPDDR3

H9CCNNNBJTALAR-NVD

DRAM LPDDR3

SK HYNIX/海力士

BGA-178

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K4F8E304HB-MGCJ

LPDDR4

K4F8E304HB-MGCJ

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

3733 Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

EOL

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K4F4E3S4HF-MGCJ

LPDDR4

K4F4E3S4HF-MGCJ

DRAM LPDDR4

SAMSUNG/三星

4Gb

x32

3733Mbps

1.8/1.1/1.1V

BGA

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K4FBE3D4HM-TFCL

LPDDR4

K4FBE3D4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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