K4UBE3D4AB-MGCL

LPDDR4X

K4UBE3D4AB-MGCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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K4UBE3D4AA-MGCL

LPDDR4X

K4UBE3D4AA-MGCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

2000/REEL

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K4U6E3S4AA-MGCR

LPDDR4X

K4U6E3S4AA-MGCR

DRAM LPDDR4X

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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H9HKNNNFBMAVAR-NEH

LPDDR4X

H9HKNNNFBMAVAR-NEH

DRAM LPDDR4X

SK HYNIX/海力士

8GB

x16

4266Mbps

1.8V/1.1V/0.6V

-30℃~105℃

BGA-556

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H9HCNNNCPUMLXR-NEE

LPDDR4X

H9HCNNNCPUMLXR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

4GB

x16

4266Mbps

1.8V/1.1V/1.1V

-25℃~85℃

BGA-200

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H9HCNNN4KUMLHR-NLO

LPDDR4X

H9HCNNN4KUMLHR-NLO

DRAM LPDDR4X

SK HYNIX/海力士

4GB

256Mx16

3200Mbps

1.1V

-40°C~105°C

FBGA-200

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H9HCNNN4KMMLHR-NME

LPDDR4X

H9HCNNN4KMMLHR-NME

DRAM LPDDR4X

SK HYNIX/海力士

0.5GB

x16

3733Mbps

1.8V/1.1V/0.6V

-25℃~85℃

BGA-200

Mass Production

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H9HKNNNCRMBVAR-NEH

LPDDR4X

H9HKNNNCRMBVAR-NEH

DRAM LPDDR4X

SK HYNIX/海力士

4GB

x16

4266Mbps

1.8V/1.1V/0.6V

-30℃~105℃

BGA-556

Mass Production

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H9HCNNNFAMMLXR-NEE

LPDDR4X

H9HCNNNFAMMLXR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

8GB

x16

4266Mbps

1.8V/1.1V/0.6V

-25℃~85℃

BGA-200

Mass Production

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H9HCNNNCPMMLXR-NEE

LPDDR4X

H9HCNNNCPMMLXR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

4GB

x16

4266Mbps

1.8V/1.1V/0.6V

-25℃~85℃

FBGA-200

Mass Production

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H9HCNNNCPMALHR-NEE

LPDDR4X

H9HCNNNCPMALHR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

4GB

x16

4266Mbps

1.8V/1.1V/0.6V

-25℃~85℃

FBGA-200

Mass Production

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H9HCNNNBKMMLHR-NME

LPDDR4X

H9HCNNNBKMMLHR-NME

DRAM LPDDR4X

SK HYNIX/海力士

2GB

3733Mbps

1.8V/1.1V/0.6V

FBGA-200

Mass production

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H9HCNNNBKMALHR-NEE

LPDDR4X

H9HCNNNBKMALHR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

2GB

x16

4266Mbps

1.8V/1.1V/0.6V

-25℃~85℃

FBGA-200

Mass production

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