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型号

规格书

品牌

DRAM类型

容量

架构

速率

工作电压

工作温度

产品详情

MT53E2G32D4NQ-046 WT:C

LPDDR4

MT53E2G32D4NQ-046 WT:C

DRAM LPDDR4

MICRON/美光

64Gb

x32

-25°C~85°C

FBGA

D8BQX

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MT53E2G32D4NQ-046 WT:A

LPDDR4

MT53E2G32D4NQ-046 WT:A

DRAM LPDDR4

MICRON/美光

64Gb

x32

-25°C~85°C

FBGA

D9ZCL

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MT53E1G32D4NQ-046 WT:E

LPDDR4

MT53E1G32D4NQ-046 WT:E

DRAM LPDDR4

MICRON/美光

32Gb

1Gx32

4266Mbps

1.1 V

-30°C~85°C

VFBGA-200

Production

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MT53E1G32D2NP-046 WT:A

LPDDR4

MT53E1G32D2NP-046 WT:A

DRAM LPDDR4

MICRON/美光

32Gb

x32

-25°C~85°C

FBGA

D9ZCK

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MT53E512M32D2NP-053 RS WT:E

LPDDR4

MT53E512M32D2NP-053 RS WT:E

DRAM LPDDR4

MICRON/美光

16Gb

512Mx32

3733Mbps

1.1V

-30°C~85°C

BGA

Production

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NT6AN256T32AV-J1

LPDDR4

NT6AN256T32AV-J1

LPDDR4

Nanya/南亚

8Gb

x32

4267Mbps

1.1V

-30C~105C

200-ball FBGA

Developing

Commercial

低功率行动DRAM-LPDDR4

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MT53E512M32D2NP-046 WT:E

LPDDR4

MT53E512M32D2NP-046 WT:E

DRAM LPDDR4

MICRON/美光

16Gb

512Mx32

4266Mbps

1.1V

-30°C~85°C

FBGA-200

Production

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NT6AN512T32AV-J2

LPDDR4

NT6AN512T32AV-J2

LPDDR4

Nanya/南亚

16Gb

x32

3733Mbps

1.1V

-30C~105C

200-ball FBGA

Developing

Commercial

低功率行动DRAM-LPDDR4

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MT53D512M64D4HR-053 WT:D

LPDDR4

MT53D512M64D4HR-053 WT:D

DRAM LPDDR4

MICRON/美光

32Gb

x64

-30°C~85°C

TSOP

D9VKN

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MT53D512M32D2DS-053 WT:D TR

LPDDR4

MT53D512M32D2DS-053 WT:D TR

DRAM LPDDR4

MICRON/美光

16Gb

512Mx32

1.1V

-30°C~85°C

WFBGA-200

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MT53D512M32D2DS-053 WT:D

LPDDR4

MT53D512M32D2DS-053 WT:D

DRAM LPDDR4

MICRON/美光

16Gb

512Mx32

1.1V

-25°C~85°C

FBGA-200

D9WHZ

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MT53D1024M32D4DT-053 WT:D

LPDDR4

MT53D1024M32D4DT-053 WT:D

DRAM LPDDR4

MICRON/美光

32Gb

1Gx32

1.1V

-30°C~85°C

VFBGA-200

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MT53E256M32D2DS-053 WT:B

LPDDR4

MT53E256M32D2DS-053 WT:B

DRAM LPDDR4

MICRON/美光

8Gb

x32

3733 Mb/s

1.8V/1.1V/1.1V

-30°C~85°C

FBGA-200

10mm×14.5mm×0.8mm

D9WRB

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H9HCNNN8KUMLHR-NLNR

LPDDR4

H9HCNNN8KUMLHR-NLNR

LPDDR4

SK hynix/海力士

1GB

3200Mbps

1.8V / 1.1V / 1.1V

200Ball

MP

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K4FHE3D4HM-MHCJ

LPDDR4

K4FHE3D4HM-MHCJ

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

3733Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

EOL

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K4F8E3S4HD-MGCL

LPDDR4

K4F8E3S4HD-MGCL

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

Mass Production

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K4F6E3S4HB-KHCL

LPDDR4

K4F6E3S4HB-KHCL

LPDDR4

SAMSUNG/三星

16 Gb

x32

4266 Mbps

1.8 / 1.1 / 1.1 V

-40 ~ 105 °C

200 FBGA

Mass Production

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H9HCNNNBKUMLHR-NMO

LPDDR4

H9HCNNNBKUMLHR-NMO

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

3733Mbps

1.8V/1.1V/1.1V

-40℃~105℃

FBGA-200

Mass Production

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H9HKNNNFBMMVAR-NEH

LPDDR4

H9HKNNNFBMMVAR-NEH

DRAM LPDDR4

SK HYNIX/海力士

2GB

x16

3733Mbps

1.8V/1.1V/1.1V

-40℃~105℃

FBGA-200

Mass Production

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H9HCNNNDAMMLHR-NEE

LPDDR4

H9HCNNNDAMMLHR-NEE

DRAM LPDDR4

SK HYNIX/海力士

FBGA-200

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