H5PS1G83KFR-S5C

DDR2

H5PS1G83KFR-S5C

DRAM DDR2

SK HYNIX/海力士

1G

128Mx8

800Mbps

1.8V

0°C~95°C

FBGA-60

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MT47H64M16NF-25E:M TR

DDR2

MT47H64M16NF-25E:M TR

DRAM DDR2

MICRON/镁光

1Gb

64Mx16

1.7V~1.9V

0°C~85°C

84-FBGA

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MT47H64M16NF-25E IT:M

DDR2

MT47H64M16NF-25E IT:M

DRAM DDR2

MICRON/镁光

1Gb

64Mx16

1.7V~1.9V

-40°C~95°C

FBGA-84

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MT47H128M8SH-25E IT:M

DDR2

MT47H128M8SH-25E IT:M

DRAM DDR2

MICRON/镁光

1Gb

x8

800 MT/s

1.8V

-40°C~95°C

FBGA-60

8mm×10mm

D9RZW

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MT47H128M16RT-25E IT:C

DDR2

MT47H128M16RT-25E IT:C

DRAM DDR2

MICRON/镁光

2Gb

128Mx16

1.7V~1.9V

-40°C~95°C

TFBGA-84

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K4T1G164QJ-BFF8

DDR2

K4T1G164QJ-BFF8

DRAM DDR2

SAMSUNG/三星

1Gb

64Mx16

1066Mbps

1.8V

-40°C~95°C

FBGA-84

EOL

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K4T1G084QJ

DDR2

K4T1G084QJ

DRAM DDR2

SAMSUNG/三星

1Gb

128Mx8

1066Mbps

1.8V

0°C~85°C

FBGA-60

EOL

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NT5TU64M16HG-AC

DDR2

NT5TU64M16HG-AC

DRAM DDR2

NANYA/南亚

1Gb

x16

800Mbps

1.8V

0°C~95°C

BGA-84

Mass Production

8mm×12.5mm×0.8mm

商业级

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NT5TU32M16FG-AC

DDR2

NT5TU32M16FG-AC

DRAM DDR2

NANYA/南亚

512Mb

x16

800Mbps

1.8V

0°C~95°C

VFBGA-84

Mass Production

7.5mm×12.2mm×0.8mm

商业级

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H5TC4G63EFR-RDA

DDR3

H5TC4G63EFR-RDA

DRAM DDR3

SK HYNIX/海力士

4Gb

x16

1866Mbps

-0.4V~1.80V

-40℃~85℃

FBGA-96

Mass Production

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H5TC4G63EFR-PBA

DDR3

H5TC4G63EFR-PBA

DRAM DDR3

SK HYNIX/海力士

4Gb

x16

1600Mbps

-0.4V~1.80V

0°C~85°C

BGA-96

Mass Production

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H5TC2G63GFR

DDR3

H5TC2G63GFR

DRAM DDR3

SK HYNIX/海力士

2Gb

128Mx16

1866Mbps

1.35V

FBGA-96

Mass Production

Low Power

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H5TQ2G63GFR

DDR3

H5TQ2G63GFR

DRAM DDR3

SK HYNIX/海力士

2Gb

x16

1.5V

BGA-96

Mass Production

Normal Power

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H5TC4G83EFR-RDA

DDR3

H5TC4G83EFR-RDA

DRAM DDR3

SK HYNIX/海力士

4Gb

x8

1866Mbps

-0.4V~1.80V

0°C~85°C

FBGA-78

Mass Production

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H5TC4G63EFR-RDF

DDR3

H5TC4G63EFR-RDF

DRAM DDR3

SK HYNIX/海力士

4G

256Mx16

1866Mbps

1.35V

0°C~85°C

BGA-96

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H5TQ4G63CFR

DDR3

H5TQ4G63CFR

DRAM DDR3

SK HYNIX/海力士

4Gb

x16

G7/H9/PB/RD/TE

1.5V

FBGA-96

Mass Production

Normal Power

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K4B4G1646E-BCNB

DDR3

K4B4G1646E-BCNB

DRAM DDR3

SAMSUNG/三星

4Gb

512Mx8

2133Mbps

1.5V

0°C~85°C

FBGA-96

Mass Production

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K4B4G1646E-BYMA

DDR3

K4B4G1646E-BYMA

DRAM DDR3

SAMSUNG/三星

4Gb

512Mx8

1866Mbps

1.35V

0°C~85°C

FBGA-96

Mass Production

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K4B4G1646D-BFMA

DDR3

K4B4G1646D-BFMA

DRAM DDR3

SAMSUNG/三星

4Gb

256Mx16

1866Mbps

1.35V

-40°C~95°C

FBGA-96

Mass Production

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K4B4G1646D-BHMA

DDR3

K4B4G1646D-BHMA

DRAM DDR3

SAMSUNG/三星

4Gb

256Mx16

1866Mbps

1.35V

-40℃~105℃

FBGA-96

Mass Production

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