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型号
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规格书
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品牌
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DRAM类型
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容量
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架构
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速率
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工作电压
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工作温度
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产品详情
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PRN256M8V89CG8GQF-15E |
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DDR3 |
PRN256M8V89CG8GQF-15E |
DRAM DDR3 |
SPECTEK |
2GB |
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-0.4V~1.975V |
0℃~95℃ |
FBGA-96 |
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8mm×10.5mm |
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点击查看 |
H5TQ4G83EFR-RDC |
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DDR3 |
H5TQ4G83EFR-RDC |
DRAM DDR3 |
SK HYNIX/海力士 |
4Gb |
x8 |
1866Mbps |
-0.4V~1.80V |
0℃~85℃ |
FBGA-78 |
Mass Production |
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点击查看 |
H5TC4G83BFR-PBA |
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DDR3 |
H5TC4G83BFR-PBA |
DRAM DDR3 |
SK HYNIX/海力士 |
4Gb |
x8 |
1600Mbps |
-0.4V~1.80V |
0°C~85°C |
FBGA-78 |
Mass Production |
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点击查看 |
MT41K512M16HA-125:A |
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DDR3L |
MT41K512M16HA-125:A |
DRAM DDR3L |
MICRON/美光 |
8G |
512Mx16 |
1600Mbps |
1.35V |
0°C~85°C |
FBGA-96 |
Production |
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点击查看 |
MT41K256M8DA-125:K |
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DDR3L |
MT41K256M8DA-125:K |
DRAM DDR3L |
MICRON/美光 |
2Gb |
x8 |
1600 MT/s |
1.35V |
0°C~95°C |
FBGA-78 |
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8mm×10.5mm×1.2mm |
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FBGA CodeD9PSH |
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点击查看 |
MT41K128M16JT-125:K |
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DDR3L |
MT41K128M16JT-125:K |
DRAM DDR3L |
MICRON/美光 |
2Gb |
x16 |
1600 MT/s |
1.35V |
0°C~95°C |
FBGA-96 |
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8mm×14mm×1.2mm |
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D9PTK |
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点击查看 |
H5TC2G83GFR-PBA |
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DDR3L |
H5TC2G83GFR-PBA |
DRAM DDR3L |
SK HYNIX/海力士 |
2Gb |
x8 |
1866Mbps |
1.283V~1.45V |
0℃~85℃ |
FBGA-78 |
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点击查看 |
H5TQ4G63EFR-RDI |
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DDR3L |
H5TQ4G63EFR-RDI |
DRAM DDR3L |
SK HYNIX/海力士 |
4Gb |
x16 |
1866Mbps |
1.283V~1.45V |
-40℃~85℃ |
FBGA-96 |
Mass Production |
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点击查看 |
H5AN4G6NBJR-UHI |
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DDR4 |
H5AN4G6NBJR-UHI |
DRAM DDR4 |
SK HYNIX/海力士 |
4G |
256Mx16 |
2400Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
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点击查看 |
H5ANAG8NCJR-XNC |
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DDR4 |
H5ANAG8NCJR-XNC |
DDR4 |
SK hynix海力士 |
16Gb |
x8 |
3200Mbps |
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FCBGA |
MP |
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点击查看 |
H5AN8G8NDJR-XNC |
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DDR4 |
H5AN8G8NDJR-XNC |
DDR4 |
SK hynix海力士 |
8Gb |
x8 |
3200Mbps |
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FCBGA |
MP |
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点击查看 |
H5ANAG6NDMR-VKC |
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DDR4 |
H5ANAG6NDMR-VKC |
DRAM DDR4 |
SK HYNIX/海力士 |
16Gb |
x16 |
2666Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4AAG085WC-BCWE |
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DDR4 |
K4AAG085WC-BCWE |
DDR4 |
SAMSUNG三星 |
16 Gb |
2G x 8 |
3200 Mbps |
1.2 V |
0 ~ 85 °C |
78 FBGA |
Sample |
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点击查看 |
H5ANAG6NCJR-XNC |
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DDR4 |
H5ANAG6NCJR-XNC |
DDR4 |
SK hynix/海力士 |
16Gb |
x16 |
3200Mbps |
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FCBGA |
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MP |
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点击查看 |
K4A8G085WG-BCWE |
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DDR4 |
K4A8G085WG-BCWE |
DDR4 |
SAMSUNG三星 |
8 Gb |
1G x 8 |
3200 Mbps |
1.2 V |
0 ~ 85 °C |
78 FBGA |
Mass Production |
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点击查看 |
H5ANBG6NAMR-VKC |
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DDR4 |
H5ANBG6NAMR-VKC |
DDR4 |
SK hynix/海力士 |
32Gb |
x16 |
2666Mbps |
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FBGA |
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MP |
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点击查看 |
K4A4G085WG-BCWE |
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DDR4 |
K4A4G085WG-BCWE |
DDR4 |
SAMSUNG三星 |
4 Gb |
512M x 8 |
3200 Mbps |
1.2 V |
0 ~ 85 °C |
78 FBGA |
Mass Production |
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点击查看 |
K4AAG085WA-BCWE |
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DDR4 |
K4AAG085WA-BCWE |
DDR4 |
SAMSUNG三星 |
16 Gb |
2G x 8 |
3200 Mbps |
1.2 V |
0 ~ 85 °C |
78FBGA |
Sample |
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四代双倍数据率同步动态随机存储器 |
点击查看 |
K4A8G085WC-BCTD |
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DDR4 |
K4A8G085WC-BCTD |
DDR4 |
SAMSUNG三星 |
8Gb |
1G x 8 |
2666 Mbps |
1.2 V |
0 ~ 85 °C |
78FBGA |
Mass Production |
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四代双倍数据率同步动态随机存储器 |
点击查看 |
K4A4G085WF-BCWE |
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DDR4 |
K4A4G085WF-BCWE |
DDR4 |
SAMSUNG三星 |
4 Gb |
512M x 8 |
3200 Mbps |
1.2 V |
0 ~ 85 °C |
78 FBGA |
Mass Production |
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点击查看 |
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