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型号

规格书

品牌

DRAM类型

容量

架构

速率

工作电压

工作温度

产品详情

MT40A512M16TB-062E:J

DDR4

MT40A512M16TB-062E:J

DRAM DDR4

MICRON/镁光

8Gb

x16

3200 MT/s

0°C~95°C

FBGA

D9WWP

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MT40A1G8SA-062E:J

DDR4

MT40A1G8SA-062E:J

DRAM DDR4

MICRON/镁光

8Gb

x8

0°C~95°C

FBGA

D9WSM

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K4F8E304HB-MGCH

DDR4

K4F8E304HB-MGCH

DRAM DDR4

SAMSUNG/三星

8GB

256Mx32

BGA

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MT40A512M16JY-083E:B

DDR4

MT40A512M16JY-083E:B

DRAM DDR4

MICRON/镁光

8Gb

x16

0°C~95°C

BGA

D9TBK

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K4A4G165WF-BCWE

DDR4

K4A4G165WF-BCWE

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A256M16GE-083E IT:B

DDR4

MT40A256M16GE-083E IT:B

DRAM DDR4

MICRON/镁光

4Gb

256Mx16

2400Mbps

1.2V

-40°C~95°C

FBGA-96

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K4A4G165WF-BITD

DDR4

K4A4G165WF-BITD

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BITD

DDR4

K4A8G165WC-BITD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BIWE

DDR4

K4A8G165WC-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WB-BIWE

DDR4

K4A8G165WB-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BCTD

DDR4

K4A8G165WC-BCTD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A8G165WB-BCRC

DDR4

K4A8G165WB-BCRC

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2400Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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M378A1G44BB0-CWE

DDR4

M378A1G44BB0-CWE

DRAM DDR4

SAMSUNG/三星

8Gb

3200Mbps

1.2V

BGA-260

Mass Production

UDIMM

1R x 16

(1G x 16) x 4

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M471A2K43EB1-CTD

DDR4

M471A2K43EB1-CTD

DRAM DDR4

SAMSUNG/三星

16GB

2666Mbps

1.2V

BGA-260

EOL

SODIMM

2R x 8

(1G x 8) x 16

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M393A2K40DB3-CWE

DDR4

M393A2K40DB3-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

RDIMM

1R x 4

(2G x 4) x 18

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M378A2K43EB1-CWE

DDR4

M378A2K43EB1-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

UDIMM

2R x 8

(1G x 8) x 16

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K4FBE3D4HM-MGCJ

DDR4

K4FBE3D4HM-MGCJ

DRAM DDR4

SAMSUNG/三星

32Gb

x32

3733Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

Mass Production

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K4F8E3S4HD-GFCL

DDR4

K4F8E3S4HD-GFCL

DRAM DDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-MGCJ

DDR4

K4F6E3S4HM-MGCJ

DRAM DDR4

SAMSUNG/三星

16Gb

x32

3733Mbps

1.8/1.1/1.1V

-25°C~85°C

FBGA-200

Mass Production

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MTA18ASF2G72HZ-2G6E4

DDR4

MTA18ASF2G72HZ-2G6E4

DRAM DDR4

MICRON/镁光

16GB

2666Mb/s

BGA

EOL

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