K4ABG165WA-MCTD

DDR4

K4ABG165WA-MCTD

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4ABG165WA-MCWE

DDR4

K4ABG165WA-MCWE

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A4G165WF-BCTD

DDR4

K4A4G165WF-BCTD

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A256M16LY-062E IT:F

DDR4

MT40A256M16LY-062E IT:F

DDR4

MICRON/美光

4Gb

256M x16

1600MHz

1.2V

-40C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 4G X16 TFBGA

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MT40A512M16LY-062E:E

DDR4

MT40A512M16LY-062E:E

DDR4

MICRON/美光

8Gb

512M x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X16 TFBGA

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MT40A1G16KD-062E IT:E

DDR4

MT40A1G16KD-062E IT:E

DDR4

MICRON/美光

16Gb

-40C to +95C

D8BHW

Production

Width:x16

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MT40A1G16TB-062E:F

DDR4

MT40A1G16TB-062E:F

DDR4

MICRON/美光

16Gb

1G x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 16G X16 TFBGA

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K4ABG165WB-MCWE

DDR4

K4ABG165WB-MCWE

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A1G16TB-062E IT:F

DDR4

MT40A1G16TB-062E IT:F

DDR4

MICRON/美光

16Gb

1G x16

1600MHz

1.2V

-40C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 16G X16 TFBGA

点击查看

K4ABG085WA-MCTD

DDR4

K4ABG085WA-MCTD

DRAM DDR4

SAMSUNG/三星

32Gb

4Gx8

2666Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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MT40A2G16TBB-062E:F

DDR4

MT40A2G16TBB-062E:F

DDR4

MICRON/美光

32Gb

2G x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 32G X16 TFBGA

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K4AAG165WB-MCTD

DDR4

K4AAG165WB-MCTD

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A1G8SA-075:E

DDR4

MT40A1G8SA-075:E

DDR4

MICRON/美光

8Gb

1G x8

1333MHz

1.2V

0C to +95C

78-ball TFBGA

Production

2666MTPS

CL = 19

DDR4 8G X8 TFBGA

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K4AAG165WB-BCWE

DDR4

K4AAG165WB-BCWE

DRAM DDR4

SAMSUNG/三星

16Gb

4Gx4

3200Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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MT40A1G8SA-062E:E

DDR4

MT40A1G8SA-062E:E

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

0C to +95C

78-ball TFBGA

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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K4AAG165WA-BIWE

DDR4

K4AAG165WA-BIWE

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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MT40A1G8SA-062E:R

DDR4

MT40A1G8SA-062E:R

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

0C to +95

78-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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MT40A1G8SA-062E IT:E

DDR4

MT40A1G8SA-062E IT:E

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

-40C to +95C

78-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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MT40A2G8SA-062E:F

DDR4

MT40A2G8SA-062E:F

DDR4

MICRON/美光

16Gb

2G x8

1600MHz

1.2V

0C to +95C

78-ball TFBGA

3200MTP

CL = 22

DDR4 16G X8 TFBGA

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MT40A2G8JC-062E IT:E

DDR4

MT40A2G8JC-062E IT:E

DDR4

MICRON/美光

16Gb

0C to +95C

D9ZFV

Sampling

Width：x8

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