K4A8G165WC-BCTD

DDR4

K4A8G165WC-BCTD

DDR4

SAMSUNG/三星

8 Gb

512M x 16

2666 Mbps

1.2 V

0 ~ 85 °C

96 FBGA

Mass Production

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M393A2K40EB3-CWE

DDR4

M393A2K40EB3-CWE

DDR4

SAMSUNG三星

16 GB

1R x 4

3200 Mbps

1.2 V

(2G x 4) x 18

Mass Production

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M393A2K43EB3-CWE

DDR4

M393A2K43EB3-CWE

DDR4

SAMSUNG三星

16 GB

2R x 8

3200 Mbps

1.2 V

(1G x 8) x 18

Mass Production

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M393A4K40DB2-CVF

DDR4

M393A4K40DB2-CVF

DDR4

SAMSUNG三星

32 GB

2R x 4

2933 Mbps

1.2 V

(2G x 4) x 36

Sample

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M393A4G40AB3-CVF

DDR4

M393A4G40AB3-CVF

DDR4

SAMSUNG三星

32 GB

1R x 4

2933 Mbps

1.2 V

(4G x 4) x 18

Sample

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M393A4G43AB3-CVF

DDR4

M393A4G43AB3-CVF

DDR4

SAMSUNG三星

32 GB

2R x 8

2933 Mbps

1.2 V

(2G x 8) x 18

Sample

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MTA18ASF4G72PDZ-2G9E1

DDR4

MTA18ASF4G72PDZ-2G9E1

DDR4

MICRON美光

32GB

2G x8

1466MHz

0C to +95C

9.00 x 11.00 x 1.20

End of Life

2933MTPS

CL = 21

MODULE

Industry Speed： PC4-2933

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M393A4K40DB3-CWE

DDR4

M393A4K40DB3-CWE

DDR4

SAMSUNG三星

32 GB

2R x 4

3200 Mbps

1.2 V

(2G x 4) x 36

Sample

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M393A4K40EB3-CWE

DDR4

M393A4K40EB3-CWE

DDR4

SAMSUNG三星

32 GB

2R x 4

3200 Mbps

1.2 V

(2G x 4) x 36

Mass Production

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MTA36ASF4G72PZ-3G2R1

DDR4

MTA36ASF4G72PZ-3G2R1

DDR4

MICRON美光

32GB

2G x4

3200MTPS

0C to +95C

7.50 x 11.00 x 1.20 TFBGA

Production

3200MTPS

CL = 22

MODULE

Speed：1600MHz

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MTA18ASF4G72PDZ-3G2E1

DDR4

MTA18ASF4G72PDZ-3G2E1

DDR4

MICRON美光

32GB

2G x8

1600MHz

0C to +95C

9.00 x 11.00 x 1.20 TFBGA

Obsolete

3200MTPS

CL = 22

MODULE

Voltage: 1.2 VOLTS

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M393A8G40AB2-CWE

DDR4

M393A8G40AB2-CWE

DDR4

SAMSUNG三星

64 GB

2R x 4

3200 Mbps

1.2 V

(4G x 4) x 36

Sample

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M393A8G40BB4-CWE

DDR4

M393A8G40BB4-CWE

DDR4

SAMSUNG三星

64 GB

2R x 4

3200 Mbps

1.2 V

(4G x 4) x 36

Mass Production

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M393A8G40CB4-CWE

DDR4

M393A8G40CB4-CWE

DDR4

SAMSUNG三星

64 GB

2R x 4

3200 Mbps

1.2 V

(4G x 4) x 36

Mass Production

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H5ANAG6NDMR-XNC

DDR4

H5ANAG6NDMR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass production

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M393ABG40M52-CAE

DDR4

M393ABG40M52-CAE

DDR4

SAMSUNG三星

256 GB

8R x 4

3200 Mbps

1.2 V

(3DS 4H 16G x 4) x 36

Sample

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H5ANAG6NCJR-XNC

DDR4

H5ANAG6NCJR-XNC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

3200Mbps

1.2V

0°C~85°C

FCBGA-96

Mass Production

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M386A8K40DM2-CWE

DDR4

M386A8K40DM2-CWE

DDR4

SAMSUNG三星

64 GB

4R x 4

3200 Mbps

1.2 V

(DDP4G x 4) x 36

Sample

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H5AN8G8NDJR-XNC

DDR4

H5AN8G8NDJR-XNC

DRAM DDR4

SK HYNIX/海力士

8Gb

x8

3200Mbps

1.2V

0°C~85°C

FCBGA-78

Mass Production

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H5AN8G8NCJR-VKC

DDR4

H5AN8G8NCJR-VKC

DRAM DDR4

SK HYNIX/海力士

8Gb

x8

2666Mbps

1.2V

0°C~85°C

FCBGA-78

Mass Production

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