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型号

规格书

品牌

DRAM类型

容量

架构

速率

工作电压

工作温度

产品详情

K4FBE3D4HM-GFCL

LPDDR4

K4FBE3D4HM-GFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

3733Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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MT53E1G32D4NQ-046 WT:F

LPDDR4

MT53E1G32D4NQ-046 WT:F

DRAM LPDDR4

MICRON/镁光

32Gb

x32

-25°C~85°C

FBGA

D9ZGW

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K4FBE3D4HM-THCL

LPDDR4

K4FBE3D4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

BGA

Mass Production

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MT53E2G32D4NQ-046WT:A

LPDDR4

MT53E2G32D4NQ-046WT:A

DRAM LPDDR4

MICRON/镁光

64Gb

x32

-25°C~85°C

FBGA

D9ZCL

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K4FHE3D4HA-TFCL

LPDDR4

K4FHE3D4HA-TFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-GFCL

LPDDR4

K4FHE3D4HA-GFCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FHE3D4HA-THCL

LPDDR4

K4FHE3D4HA-THCL

DRAM LPDDR4

SAMSUNG/三星

24Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-TFCL

LPDDR4

K4F6E3S4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4F6E3S4HM-THCL

LPDDR4

K4F6E3S4HM-THCL

DRAM LPDDR4

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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MT53E2G32D8QD-046 WT:E

LPDDR4

MT53E2G32D8QD-046 WT:E

DRAM LPDDR4

MICRON/镁光

128Gb

x32

-25°C~85°C

FBGA

D9WLV

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K4F8E3S4HD-GHCL

LPDDR4

K4F8E3S4HD-GHCL

DRAM LPDDR4

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/1.1V

-40℃~105℃

FBGA-200

Mass Production

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MT53E2G32D4NQ-046 WT:C

LPDDR4

MT53E2G32D4NQ-046 WT:C

DRAM LPDDR4

MICRON/镁光

64Gb

x32

-25°C~85°C

FBGA

D8BQX

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MT53E2G32D4NQ-046 WT:A

LPDDR4

MT53E2G32D4NQ-046 WT:A

DRAM LPDDR4

MICRON/镁光

64Gb

x32

-25°C~85°C

FBGA

D9ZCL

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MT53E1G32D4NQ-046 WT:E

LPDDR4

MT53E1G32D4NQ-046 WT:E

DRAM LPDDR4

MICRON/镁光

32Gb

1Gx32

4266Mbps

1.1 V

-30°C~85°C

VFBGA-200

Production

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MT53E1G32D2NP-046 WT:A

LPDDR4

MT53E1G32D2NP-046 WT:A

DRAM LPDDR4

MICRON/镁光

32Gb

x32

-25°C~85°C

FBGA

D9ZCK

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MT53E512M32D2NP-053 RS WT:E

LPDDR4

MT53E512M32D2NP-053 RS WT:E

DRAM LPDDR4

MICRON/镁光

16Gb

512Mx32

3733Mbps

1.1V

-30°C~85°C

BGA

Production

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MT53E512M32D2NP-046 WT:E

LPDDR4

MT53E512M32D2NP-046 WT:E

DRAM LPDDR4

MICRON/镁光

16Gb

512Mx32

4266Mbps

1.1V

-30°C~85°C

FBGA-200

Production

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MT53D512M64D4HR-053 WT:D

LPDDR4

MT53D512M64D4HR-053 WT:D

DRAM LPDDR4

MICRON/镁光

32Gb

x64

-30°C~85°C

TSOP

D9VKN

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MT53D512M32D2DS-053 WT:D TR

LPDDR4

MT53D512M32D2DS-053 WT:D TR

DRAM LPDDR4

MICRON/镁光

16Gb

512Mx32

1.1V

-30°C~85°C

WFBGA-200

点击查看

MT53D512M32D2DS-053 WT:D

LPDDR4

MT53D512M32D2DS-053 WT:D

DRAM LPDDR4

MICRON/镁光

16Gb

512Mx32

1.1V

-25°C~85°C

FBGA-200

D9WHZ

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