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型号
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规格书
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品牌
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DRAM类型
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容量
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架构
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速率
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工作电压
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工作温度
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产品详情
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MT40A1G16RC-062E:B |
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DDR4 |
MT40A1G16RC-062E:B |
DRAM DDR4 |
MICRON/美光 |
16Gb |
x16 |
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0°C~95°C |
FBGA |
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D9XPG |
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点击查看 |
MT40A2G8JC-062E:E |
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DDR4 |
MT40A2G8JC-062E:E |
DRAM DDR4 |
MICRON/美光 |
16Gb |
x8 |
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-40℃~85℃ |
FBGA |
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D9ZFV |
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点击查看 |
MT40A512M16TB-062E:J |
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DDR4 |
MT40A512M16TB-062E:J |
DRAM DDR4 |
MICRON/美光 |
8Gb |
x16 |
3200 MT/s |
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0°C~95°C |
FBGA |
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D9WWP |
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点击查看 |
MT40A1G8SA-062E:J |
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DDR4 |
MT40A1G8SA-062E:J |
DRAM DDR4 |
MICRON/美光 |
8Gb |
x8 |
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0°C~95°C |
FBGA |
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D9WSM |
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点击查看 |
MT40A4G4JC-062E |
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DDR4 |
MT40A4G4JC-062E |
DDR4 |
MICRON/美光 |
16Gb |
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0C to +95C |
D9XPC |
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Sampling |
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Width:x4 |
点击查看 |
K4F8E304HB-MGCH |
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DDR4 |
K4F8E304HB-MGCH |
DRAM DDR4 |
SAMSUNG/三星 |
8GB |
256Mx32 |
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BGA |
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点击查看 |
MT40A512M16JY-083E:B |
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DDR4 |
MT40A512M16JY-083E:B |
DRAM DDR4 |
MICRON/美光 |
8Gb |
x16 |
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0°C~95°C |
BGA |
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D9TBK |
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点击查看 |
K4A4G165WF-BCWE |
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DDR4 |
K4A4G165WF-BCWE |
DRAM DDR4 |
SAMSUNG/三星 |
4Gb |
256Mx16 |
3200Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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点击查看 |
MT40A256M16GE-083E IT:B |
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DDR4 |
MT40A256M16GE-083E IT:B |
DRAM DDR4 |
MICRON/美光 |
4Gb |
256Mx16 |
2400Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
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点击查看 |
K4A4G165WF-BITD |
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DDR4 |
K4A4G165WF-BITD |
DRAM DDR4 |
SAMSUNG/三星 |
4Gb |
256Mx16 |
2666Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4A8G165WC-BITD |
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DDR4 |
K4A8G165WC-BITD |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
2666Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4A8G165WC-BIWE |
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DDR4 |
K4A8G165WC-BIWE |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
3200Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4A8G165WB-BIWE |
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DDR4 |
K4A8G165WB-BIWE |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
3200Mbps |
1.2V |
-40°C~95°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4A8G165WC-BCTD |
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DDR4 |
K4A8G165WC-BCTD |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
2666Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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点击查看 |
K4A8G165WB-BCRC |
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DDR4 |
K4A8G165WB-BCRC |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
512Mx16 |
2400Mbps |
1.2V |
0°C~85°C |
FBGA-96 |
Mass Production |
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点击查看 |
M378A1G44BB0-CWE |
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DDR4 |
M378A1G44BB0-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
8Gb |
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3200Mbps |
1.2V |
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BGA-260 |
Mass Production |
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UDIMM |
1R x 16 |
(1G x 16) x 4 |
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点击查看 |
M471A2K43EB1-CTD |
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DDR4 |
M471A2K43EB1-CTD |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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2666Mbps |
1.2V |
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BGA-260 |
EOL |
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SODIMM |
2R x 8 |
(1G x 8) x 16 |
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点击查看 |
M393A2K40DB3-CWE |
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DDR4 |
M393A2K40DB3-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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3200Mbps |
1.2V |
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BGA-288 |
Mass Production |
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RDIMM |
1R x 4 |
(2G x 4) x 18 |
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点击查看 |
NT5AD256M16D4-JRT |
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DDR4 |
NT5AD256M16D4-JRT |
DDR4 |
Nanya/南亚 |
4Gb |
x16 |
3200Mbps |
1.2V |
-40C~95C |
96-ball BGA |
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Developing |
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Commercial |
标准型DRAM-DDR4 |
点击查看 |
M378A2K43EB1-CWE |
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DDR4 |
M378A2K43EB1-CWE |
DRAM DDR4 |
SAMSUNG/三星 |
16GB |
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3200Mbps |
1.2V |
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BGA-288 |
Mass Production |
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UDIMM |
2R x 8 |
(1G x 8) x 16 |
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点击查看 |
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