H5AN4G6NBJR-UHC

DRAM

H5AN4G6NBJR-UHC

DDR SDRAM

SK HYNIX/海力士

4G

256Mx16

2400Mbps

1.2V

0°C~85°C

BGA-96

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K4G80325FC-HC25

GDDR5

K4G80325FC-HC25

DRAM GDDR5

SAMSUNG/三星

8Gb

256Mx32

8.0 Gbps

FBGA-170

EOL

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K4ZAF325BM-HC16

GDDR6

K4ZAF325BM-HC16

DRAM GDDR6

SAMSUNG/三星

16Gb

512Mx32

16.0Gbps

FBGA-180

EOL

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MT61K256M32JE-14:A

GDDR6

MT61K256M32JE-14:A

DRAM GDDR6

MICRON/镁光

8Gb

256Mx32

1.31V~1.39V

0°C~95°C

TFBGA-180

EOL

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K4Z80325BC-HC14

GDDR6

K4Z80325BC-HC14

DRAM GDDR6

SAMSUNG/三星

8Gb

256Mx32

14.0 Gbps

FBGA-180

Mass Production

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MT46H32M32LFB5-5 IT:B TR

LPDDR

MT46H32M32LFB5-5 IT:B TR

DRAM LPDDR

MICRON/镁光

1Gb

32Mx32

1.7V~1.95V

-40℃~85℃

VFBGA-90

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MT46H32M16LFBF-5 IT:C TR

LPDDR

MT46H32M16LFBF-5 IT:C TR

DRAM LPDDR

MICRON/镁光

512Mb

32Mx16

1.7V~1.95V

-40℃~85℃

VFBGA-60

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K4EBE304EB-EGCF

LPDDR3

K4EBE304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4EBE304EC-EGCF

LPDDR3

K4EBE304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K3QF4F40BM-AGCF

LPDDR3

K3QF4F40BM-AGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x64

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-253

Mass Production

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MT52L1G32D4PG-107 WT:B

LPDDR3

MT52L1G32D4PG-107 WT:B

DRAM LPDDR3

MICRON/镁光

32Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SSK

1.071ns

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MT52L512M32D2PF-107 WT:B

LPDDR3

MT52L512M32D2PF-107 WT:B

DRAM LPDDR3

MICRON/镁光

16Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SSF

1.071ns

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MT52L256M32D1PF-107 WT:B

LPDDR3

MT52L256M32D1PF-107 WT:B

DRAM LPDDR3

MICRON/镁光

8Gb

x32

1866mb/s

1.8V/1.2V

-30°C~85°C

FBGA-178

D9SRZ

1.071ns

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MT52L256M32D1PF-093 WT:B

LPDDR3

MT52L256M32D1PF-093 WT:B

DRAM LPDDR3

MICRON/镁光

8Gb

x32

1.2V

-30°C~85°C

FBGA-178

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K4E8E324EB-EGCF

LPDDR3

K4E8E324EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

48Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4EBE304ED-EGCG

LPDDR3

K4EBE304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4EBE304EC-EGCG

LPDDR3

K4EBE304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324ED-EGCG

LPDDR3

K4E8E324ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

8Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324EB-AGCF

LPDDR3

K4E8E324EB-AGCF

DRAM LPDDR3

SAMSUNG/三星

8Gb

256Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-168

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K4E6E304EC-AGCF

LPDDR3

K4E6E304EC-AGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-168

Mass Production

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