型号
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规格书
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品牌
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DRAM类型
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容量
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架构
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速率
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工作电压
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工作温度
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产品详情
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H9HCNNNBKMMLHR-NME |
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LPDDR4X |
H9HCNNNBKMMLHR-NME |
DRAM LPDDR4X |
SK HYNIX/海力士 |
2GB |
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3733Mbps |
1.8V/1.1V/0.6V |
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FBGA-200 |
Mass production |
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点击查看 |
H9HCNNNBKMALHR-NEE |
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LPDDR4X |
H9HCNNNBKMALHR-NEE |
DRAM LPDDR4X |
SK HYNIX/海力士 |
2GB |
x16 |
4266Mbps |
1.8V/1.1V/0.6V |
-25℃~85℃ |
FBGA-200 |
Mass production |
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点击查看 |
K4U6E3S4AB-MGCL |
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LPDDR4X |
K4U6E3S4AB-MGCL |
LPDDR4X |
SAMSUNG/三星 |
16 Gb |
x32 |
4266 Mbps |
1.8 / 1.1 / 0.6 V |
-25 ~ 85 °C |
200 FBGA |
Mass Production |
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点击查看 |
K4UBE3D4AM-GHCL |
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LPDDR4X |
K4UBE3D4AM-GHCL |
LPDDR4X |
SAMSUNG/三星 |
32Gb |
x32 |
4266 Mbps |
1.8 / 1.1 / 0.6 V |
-40 ~ 105 °C |
200FBGA |
Mass Production |
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四代超低功耗双倍数据率同步动态随机存储器 |
点击查看 |
H9HCNNNCRMBLPR-NEE |
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LPDDR4X |
H9HCNNNCRMBLPR-NEE |
LPDDR4X |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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432Ball |
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MP |
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点击查看 |
H9HCNNNCPMMLXR-NEE |
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LPDDR4X |
H9HCNNNCPMMLXR-NEE |
LPDDR4X |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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200Ball |
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MP |
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点击查看 |
H9HCNNN4KMMLHR-NME |
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LPDDR4X |
H9HCNNN4KMMLHR-NME |
LPDDR4X |
SK hynix/海力士 |
0.5GB |
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3733Mbps |
1.8V / 1.1V / 0.6V |
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200Ball |
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MP |
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点击查看 |
H9HKNNNFBMAVAR-NEH |
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LPDDR4X |
H9HKNNNFBMAVAR-NEH |
LPDDR4X |
SK hynix/海力士 |
8GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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556Ball |
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MP |
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点击查看 |
H9HKNNNCRMBVAR-NEH |
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LPDDR4X |
H9HKNNNCRMBVAR-NEH |
LPDDR4X |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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556Ball |
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MP |
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点击查看 |
H54G56BYYQX089 |
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LPDDR4X |
H54G56BYYQX089 |
LPDDR4X |
SK hynix/海力士 |
4GB |
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4266Mbps |
1.8V / 1.1V / 0.6V |
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200Ball |
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MP |
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点击查看 |