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型号

规格书

类别

容量

架构

速率

工作电压

工作温度

产品详情

MT41K64M16TW-107 IT:J

MT41K64M16TW-107 IT:J

DDR3

MICRON/美光

1Gb

64M x16

933MHz

1.35V

-40C to +95C

1866MTPS

CL = 13

DDR3 1G X16 TFBGA

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MT41K256M8DA-125 IT:K

MT41K256M8DA-125 IT:K

DDR3

MICRON/美光

2Gb

256M x8

800MHz

1.35V

-40C to +95C

78-ball FBGA

Production

1600MTPS

CL = 11

DDR3 2G X8 FBGA

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MT41K128M16JT-125

MT41K128M16JT-125

DDR3

MICRON/美光

2Gb

x16

0C to +95C

D9PTK

Production

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MT41K512M8DA-107 IT:P

MT41K512M8DA-107 IT:P

DDR3

MICRON/美光

4Gb

512M x8

933MHz

1.35V

-40C to +95C

78-ball TFBGA

Production

1866MTPS

CL = 13

DDR3 4G X8 TFBGA

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MT40A256M16GE-083E

MT40A256M16GE-083E

DDR4 SDRAM

MICRON/美光

4Gb

x16

1200MHz

1.2V

0C to +95C

96-ball TFBGA

256Mb

Production

CL = 16

Cycle Time:0.833ns

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MT40A256M16LY-062E IT:F

MT40A256M16LY-062E IT:F

DDR4

MICRON/美光

4Gb

256M x16

1600MHz

1.2V

-40C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 4G X16 TFBGA

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MT40A512M16LY-062E:E

MT40A512M16LY-062E:E

DDR4

MICRON/美光

8Gb

512M x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X16 TFBGA

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MT40A1G16KD-062E IT:E

MT40A1G16KD-062E IT:E

DDR4

MICRON/美光

16Gb

-40C to +95C

D8BHW

Production

Width:x16

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MT40A1G16TB-062E:F

MT40A1G16TB-062E:F

DDR4

MICRON/美光

16Gb

1G x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 16G X16 TFBGA

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MT40A1G16TB-062E IT:F

MT40A1G16TB-062E IT:F

DDR4

MICRON/美光

16Gb

1G x16

1600MHz

1.2V

-40C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 16G X16 TFBGA

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MT40A2G16TBB-062E:F

MT40A2G16TBB-062E:F

DDR4

MICRON/美光

32Gb

2G x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 32G X16 TFBGA

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MT40A1G8SA-075:E

MT40A1G8SA-075:E

DDR4

MICRON/美光

8Gb

1G x8

1333MHz

1.2V

0C to +95C

78-ball TFBGA

Production

2666MTPS

CL = 19

DDR4 8G X8 TFBGA

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MT40A1G8SA-062E:E

MT40A1G8SA-062E:E

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

0C to +95C

78-ball TFBGA

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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MT40A1G8SA-062E:R

MT40A1G8SA-062E:R

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

0C to +95

78-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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MT40A1G8SA-062E IT:E

MT40A1G8SA-062E IT:E

DDR4

MICRON/美光

8Gb

1G x8

1600MHz

1.2V

-40C to +95C

78-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X8 TFBGA

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MT40A2G8SA-062E:F

MT40A2G8SA-062E:F

DDR4

MICRON/美光

16Gb

2G x8

1600MHz

1.2V

0C to +95C

78-ball TFBGA

3200MTP

CL = 22

DDR4 16G X8 TFBGA

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MT40A2G8JC-062E IT:E

MT40A2G8JC-062E IT:E

DDR4

MICRON/美光

16Gb

0C to +95C

D9ZFV

Sampling

Width:x8

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MT53D512M32D2DS-046 WT:D

MT53D512M32D2DS-046 WT:D

DRAM

MICRON/美光

SDRAM存储器

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MT53D512M32D2DS-046 AAT:D

MT53D512M32D2DS-046 AAT:D

LPDDR4

MICRON/美光

16Gb

512M x32

2133MHz

0.6V

-40C to +105C

200-ball WFBGA

4266MTPS

CL = Programmable

COMPONENT

LPDDR4 16G X32 WFBGA

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MT53E768M32D4DT-053 AAT:E

MT53E768M32D4DT-053 AAT:E

LPDDR4

MICRON/美光

24Gb

768M x32

1866MHz

0.6V

-40C to +105C

200-ball VFBGA

Production

3733MTPS

CL = Programmable

COMPONENT

LPDDR4 24G X32 VFBGA

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