K3UH5H50AM-AGCL

K3UH5H50AM-AGCL

DRAM

SAMSUNG三星

32Gb

x64

4266Mbps

1.8 / 1.1 / 0.6 V

-25 ~ 85 °C

556FBGA

Sample

四代超低功耗双倍数据率同步动态随机存储器

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K4RAH165VB-BCQK

K4RAH165VB-BCQK

DDR5

SAMSUNG三星

16 Gb

1G x 16

4800 Mbps

1.1 V

0 ~ 85 °C

106 FBGA

Mass Production

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K4VAF325ZC-SC28

K4VAF325ZC-SC28

SAMSUNG三星

RDIMM

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M393A2K40DB3-CWE

M393A2K40DB3-CWE

DDR4

SAMSUNG三星

16 GB

1R x 4

3200 Mbps

1.2 V

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KLMDG8JEUD-B04Q

KLMDG8JEUD-B04Q

eMMC 5.1

SAMSUNG三星

128GB

1.8 / 3.3 V

-40 ~ 105 °C

11.5 x 13 x 1.2 mm

Sample

HS400

嵌入式多媒体卡

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M471A5244CB0-CWE

M471A5244CB0-CWE

DDR4

SAMSUNG三星

4 GB

1R x 16

3200 Mbps

1.2 V

Sample

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H5AG36EXNDX017N

H5AG36EXNDX017N

SKHYNIX海力士

CS

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H56G42AS4DX014N

H56G42AS4DX014N

GDDR6

SKHYNIX海力士

16Gb

DDR 8.0GHz

1.35V / 1.35V

FCBGA

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H5CG48AGBDX018N

H5CG48AGBDX018N

SKHYNIX海力士

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H5CG46MEBDX015R

H5CG46MEBDX015R

SKHYNIX海力士

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K4F6E3S4HB-KHCL

K4F6E3S4HB-KHCL

LPDDR4

SAMSUNG/三星

16 Gb

x32

4266 Mbps

1.8 / 1.1 / 1.1 V

-40 ~ 105 °C

200 FBGA

Mass Production

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KLUDG4U1FB-B0C1

KLUDG4U1FB-B0C1

通用闪存

SAMSUNG/三星

128 GB

1.8 / 3.3 V

-25 ~ 85 °C

11.5 x 13 x 1.0 mm

Sample

Version:UFS 2.1

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KLUEGAJ1ZD-B0CP

KLUEGAJ1ZD-B0CP

通用闪存

SAMSUNG/三星

256GB

1.8 / 3.3 V

-40 ~ 85 °C

11.5 x 13 x 1.65 mm

Mass Production

Version:UFS 2.1

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KLUEG4RHHD-B0G1

KLUEG4RHHD-B0G1

SAMSUNG/三星

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KLUEG4RHGB-B0E1

KLUEG4RHGB-B0E1

UFS 3.1

SAMSUNG/三星

256 GB

1.2 / 2.5 V

-25 ~ 85 °C

11 x 13 x 0.8 mm

Mass Production

G4 2Lane

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THGJFJT2T85BAT0

THGJFJT2T85BAT0

KIOXIA/铠侠

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HN8T062EHKX039

HN8T062EHKX039

SK hynix/海力士

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