型号
|
规格书
|
品牌
|
容量
|
架构
|
速率
|
工作电压
|
工作温度
|
产品详情
|
KHBBC4B03B-MC1JT00 |
|
KHBBC4B03B-MC1JT00 |
HBM |
SAMSUNG/三星 |
36GB |
|
HBM3E-8.0Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHBB84A03B-MC1JT00 |
|
KHBB84A03B-MC1JT00 |
HBM |
SAMSUNG/三星 |
24GB |
|
HBM3E-8.0Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHBAC4A03D-MC1HT00 |
|
KHBAC4A03D-MC1HT00 |
HBM |
SAMSUNG/三星 |
24Gb |
|
HBM3-6.4Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHBA84A03D-MC1HT00 |
|
KHBA84A03D-MC1HT00 |
HBM |
SAMSUNG/三星 |
16Gb |
|
HBM3-6.4Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHAA84901B-JC17T00 |
|
KHAA84901B-JC17T00 |
HBM |
SAMSUNG/三星 |
16Gb |
|
HBM2E-3.6Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHA884901X-MC13TNX |
|
KHA884901X-MC13TNX |
HBM |
SAMSUNG/三星 |
8Gb |
|
HBM2-2.4Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KHA884901X-MC12TIF |
|
KHA884901X-MC12TIF |
HBM |
SAMSUNG/三星 |
8Gb |
|
HBM2-2.0Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
K3QF3F30BM-AGCF |
|
K3QF3F30BM-AGCF |
LPDDR3 |
SAMSUNG/三星 |
16 Gb |
x64 |
1866 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
253 FBGA |
EOL |
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
K3UH5H50MM-NGCJ |
|
K3UH5H50MM-NGCJ |
LPDDR4X |
SAMSUNG/三星 |
32Gb |
x64 |
3733 Mbps |
1.8 / 1.1 / 0.6 V |
-25 ~ 85 °C |
366FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
K4U8E3S4AD-CHCL |
|
K4U8E3S4AD-CHCL |
LPDDR4X |
SAMSUNG/三星 |
8 Gb |
x32 |
4266 Mbps |
1.8 / 1.1 / 0.6 V |
-40 ~ 105 °C |
200FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
四代超低功耗双倍数据率同步动态随机存储器 |
点击查看 |
K4E8E324EB-EGCG |
|
K4E8E324EB-EGCG |
LPDDR3 |
SAMSUNG/三星 |
8 Gb |
x32 |
2133 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
178FBGA |
批量生产 |
|
|
|
|
|
|
|
|
|
|
三代低功耗双倍数据率同步动态随机存储器 |
点击查看 |
KLMCG2UCTB-B041T02 |
|
KLMCG2UCTB-B041T02 |
eMMC 5.1 |
SAMSUNG/三星 |
64 GB |
|
|
1.8 / 3.3 V |
-25 ~ 85 °C |
11.5 x 13 x 0.8 mm |
Mass Production |
HS400 |
eMMC 5.1 |
|
|
|
|
|
|
|
|
|
点击查看 |
K3QF6F60AM-FGCF |
|
K3QF6F60AM-FGCF |
LPDDR3 |
SAMSUNG/三星 |
24Gb |
x64 |
1866 Mbps |
1.8 / 1.2 / 1.2 V |
-25 ~ 85 °C |
256FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
K4U6E3S4AB-MGCL |
|
K4U6E3S4AB-MGCL |
LPDDR4X |
SAMSUNG/三星 |
16 Gb |
x32 |
4266 Mbps |
1.8 / 1.1 / 0.6 V |
-25 ~ 85 °C |
200 FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
K4A8G165WC-BCTD |
|
K4A8G165WC-BCTD |
DDR4 |
SAMSUNG/三星 |
8 Gb |
512M x 16 |
2666 Mbps |
1.2 V |
0 ~ 85 °C |
96 FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
KMGX6001BA-B514009 |
|
KMGX6001BA-B514009 |
LPDDR3 |
SAMSUNG/三星 |
|
|
1866 Mbps |
|
|
221 FBGA |
Mass Production |
|
eMMC 5.1 |
32 GB |
24 Gb |
|
|
|
|
|
|
多芯片封装 |
点击查看 |
K4UBE3D4AM-GHCL |
|
K4UBE3D4AM-GHCL |
LPDDR4X |
SAMSUNG/三星 |
32Gb |
x32 |
4266 Mbps |
1.8 / 1.1 / 0.6 V |
-40 ~ 105 °C |
200FBGA |
Mass Production |
|
|
|
|
|
|
|
|
|
|
四代超低功耗双倍数据率同步动态随机存储器 |
点击查看 |
H26M52208FPRI |
|
H26M52208FPRI |
eMMC |
SK hynix/海力士 |
16GB |
|
|
3.3V / 1.8V |
-40~85C |
FBGA |
|
|
eMMC 5.1 > EE510A |
|
|
MP |
|
|
|
|
IT |
|
点击查看 |
H5WRAGESM8W-N8L |
|
H5WRAGESM8W-N8L |
HBM |
SK hynix/海力士 |
16Gb,8Hi |
|
HBM2E-3.6Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |
H5WRAGESM8W-N6L |
|
H5WRAGESM8W-N6L |
HBM |
SK hynix/海力士 |
16Gb,8Hi |
|
HBM2E-3.2Gbps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
点击查看 |