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型号

规格书

品牌

容量

架构

速率

工作电压

工作温度

产品详情

K4ZAF325BM-HC16

K4ZAF325BM-HC16

DRAM GDDR6

SAMSUNG/三星

16Gb

512Mx32

16.0Gbps

FBGA-180

EOL

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KLMDG4UCTB-B041

KLMDG4UCTB-B041

eMMC

SAMSUNG/三星

128GB

1.8/3.3V

-25°C~85°C

BGA

Mass Production

11.5mm x 13mm x 1.0mm

5.1

HS400

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K4ABG165WB-MCWE

K4ABG165WB-MCWE

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4ABG085WA-MCTD

K4ABG085WA-MCTD

DRAM DDR4

SAMSUNG/三星

32Gb

4Gx8

2666Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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K4AAG165WB-MCTD

K4AAG165WB-MCTD

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4AAG165WB-BCWE

K4AAG165WB-BCWE

DRAM DDR4

SAMSUNG/三星

16Gb

4Gx4

3200Mbps

1.2V

0°C~85°C

FBGA-78

Mass Production

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K4AAG165WA-BIWE

K4AAG165WA-BIWE

DRAM DDR4

SAMSUNG/三星

16Gb

1Gx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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KLUDG8J1ZD-C0CP

KLUDG8J1ZD-C0CP

UFS

SAMSUNG/三星

128GB

1.8/3.3V

-40°C~95°C

BGA

Mass Production

11.5mm x 13mm x 1.2mm

2.1

G3 2Lane

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KLUDG8J1ZD-C0CQ

KLUDG8J1ZD-C0CQ

UFS

SAMSUNG/三星

128GB

1.8/3.3V

-40℃~105℃

BGA

Mass Production

11.5mm x 13mm x 1.2mm

2.1

G3 2Lane

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KLUCG4J1ZD-C0CP

KLUCG4J1ZD-C0CP

UFS

SAMSUNG/三星

128GB

1.8/3.3V

-40°C~95°C

BGA

Mass Production

11.5mm x 13mm x 1.2mm

2.1

G3 2Lane

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KLUCG4J1ZD-C0CQ

KLUCG4J1ZD-C0CQ

UFS

SAMSUNG/三星

32GB

1.8/3.3V

-40°C~95°C

BGA

Mass Production

11.5mm x 13mm x 1.2mm

2.1

G3 2Lane

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KLMCG4JEUD-B04P

KLMCG4JEUD-B04P

eMMC

SAMSUNG/三星

64GB

1.8/3.3V

-40℃~85℃

BGA

Mass Production

11.5mm x 13mm x 1.2mm

5.1

HS400

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KLMBG4GEUF-B04Q

KLMBG4GEUF-B04Q

eMMC

SAMSUNG/三星

32GB

1.8/3.3V

-40℃~105℃

BGA

Mass Production

11.5mm x 13mm x 0.8mm

5.1

HS400

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KLM8G1GEUF-B04Q

KLM8G1GEUF-B04Q

eMMC

SAMSUNG/三星

8GB

1.8/3.3V

-40℃~105℃

BGA

Mass Production

11.5mm x 13mm x 0.8mm

5.1

HS400

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K4UJE3Q4AA-TFCL

K4UJE3Q4AA-TFCL

DRAM LPDDR4X

SAMSUNG/三星

48Gb

x32

4266Mbps

1.8/1.1/0.6V

-40°C~95°C

FBGA-200

Mass Production

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K4UJE3Q4AA-THCL

K4UJE3Q4AA-THCL

DRAM LPDDR4X

SAMSUNG/三星

48Gb

x32

4266Mbps

1.8/1.1/0.6V

-40℃~105℃

FBGA-200

Mass Production

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K4UBE3D4AM-TFCL

K4UBE3D4AM-TFCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-40°C~95°C

FBGA-200

Mass Production

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K4UBE3D4AM-THCL

K4UBE3D4AM-THCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-40℃~105℃

FBGA-200

Mass Production

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K4FBE3D4HM-TFCL

K4FBE3D4HM-TFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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K4FBE3D4HM-GFCL

K4FBE3D4HM-GFCL

DRAM LPDDR4

SAMSUNG/三星

32Gb

x32

3733Mbps

1.8/1.1/1.1V

-40°C~95°C

FBGA-200

Mass Production

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