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型号

规格书

类别

容量

架构

速率

工作电压

工作温度

产品详情

K4A4G165WF-BITD

K4A4G165WF-BITD

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BITD

K4A8G165WC-BITD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WC-BIWE

K4A8G165WC-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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K4A8G165WB-BIWE

K4A8G165WB-BIWE

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

3200Mbps

1.2V

-40°C~95°C

FBGA-96

Mass Production

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KLMAG2GESD-C02P

KLMAG2GESD-C02P

eMMC

SAMSUNG/三星

16GB

1.8V/3.3V

-40°C~85°C

FBGA-100

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KLMBG4GESD-B02P

KLMBG4GESD-B02P

eMMC

SAMSUNG/三星

32GB

BGA

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MZVL2512HCJQ-00$00/07

MZVL2512HCJQ-00$00/07

SSD

SAMSUNG/三星

512GB

BGA

Mass Production

PCIe 4.0x4

PM9A1

6900 MB/s

5000 MB/s

800K IOPS

800K IOPS

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K4UCE3Q4AA-MGCL

K4UCE3Q4AA-MGCL

DRAM LPDDR4X

SAMSUNG/三星

64Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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K4UCE3Q4AA-MGCR

K4UCE3Q4AA-MGCR

DRAM LPDDR4X

SAMSUNG/三星

64GB

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Sample

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M321RAGA0B20-CWK

M321RAGA0B20-CWK

DRAM DDR5

SAMSUNG/三星

128GB

4800Mbps

1.1V

BGA-288

Mass Production

RDIMM

4R x 4

(2H 3DS 8G x 4) x 40

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K4E8E324EB-EGCF

K4E8E324EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

48Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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KLMCG4JETD-B041

KLMCG4JETD-B041

eMMC

SAMSUNG/三星

64GB

1.8/3.3V

-25°C~85°C

FBGA-153

Mass Production

11.5mm x 13mm x 1.0mm

5.1

HS400

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K4A8G165WC-BCTD

K4A8G165WC-BCTD

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A8G165WB-BCRC

K4A8G165WB-BCRC

DRAM DDR4

SAMSUNG/三星

8Gb

512Mx16

2400Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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M378A1G44BB0-CWE

M378A1G44BB0-CWE

DRAM DDR4

SAMSUNG/三星

8Gb

3200Mbps

1.2V

BGA-260

Mass Production

UDIMM

1R x 16

(1G x 16) x 4

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MZVLB1T0HBLR-00000

MZVLB1T0HBLR-00000

SSD

SAMSUNG/三星

1TB

Mass Production

PCIe Gen3 x4

PM981a

3500 MB/s

3000 MB/s

580K IOPS

500K IOPS

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MZQLB3T8HALS-00003

MZQLB3T8HALS-00003

SSD

SAMSUNG/三星

3.84TB

Mass Production

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M471A2K43EB1-CTD

M471A2K43EB1-CTD

DRAM DDR4

SAMSUNG/三星

16GB

2666Mbps

1.2V

BGA-260

EOL

SODIMM

2R x 8

(1G x 8) x 16

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M393A2K40DB3-CWE

M393A2K40DB3-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

RDIMM

1R x 4

(2G x 4) x 18

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M378A2K43EB1-CWE

M378A2K43EB1-CWE

DRAM DDR4

SAMSUNG/三星

16GB

3200Mbps

1.2V

BGA-288

Mass Production

UDIMM

2R x 8

(1G x 8) x 16

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