CN | EN

产品品牌

如需更详细的资料,请联系我们


型号

规格书

DRAM类型

容量

架构

速率

工作电压

工作温度

产品详情

M321R8GA0BB0-CQK

M321R8GA0BB0-CQK

DDR5

SAMSUNG三星

64 GB

2R x 4

4800 Mbps

1.1 V

(4G x 4) x 40

Mass Production

点击查看

M321R8GA0PB2-CCP

M321R8GA0PB2-CCP

DDR5

SAMSUNG三星

64 GB

2R x 4

6400 Mbps

1.1 V

(4G x 4) x 40

Sample

点击查看

HMCG94AGBRA182N

HMCG94AGBRA182N

DDR5

SK hynix海力士

点击查看

M321RYGA0BB0-CQK

M321RYGA0BB0-CQK

DDR5

SAMSUNG三星

96 GB

2R x 4

4800 Mbps

1.1 V

(4G x 4) x 40

Mass Production

点击查看

MTC40F204WS1RC56BBZ

MTC40F204WS1RC56BBZ

DDR5

MICRON美光

点击查看

M321RYGA0PB0-CWM

M321RYGA0PB0-CWM

DDR5

SAMSUNG三星

96 GB

2R x 4

5600 Mbps

1.1 V

(4G x 4) x 40

Mass Production

点击查看

H5CG48MEBDX014N

H5CG48MEBDX014N

SK hynix海力士

点击查看

H5CG48AGBDX018N

H5CG48AGBDX018N

SK hynix海力士

点击查看

H5CGD8MGBDX021N

H5CGD8MGBDX021N

SK hynix海力士

点击查看

H5AG48DXNDX116N

H5AG48DXNDX116N

SK hynix海力士

点击查看

H5AG38EXNDX026N

H5AG38EXNDX026N

SK hynix海力士

点击查看

H5ANAG8NCJR-XNC

H5ANAG8NCJR-XNC

DDR4

SK hynix海力士

16Gb

x8

3200Mbps

FCBGA

MP

点击查看

H5AN8G8NDJR-XNC

H5AN8G8NDJR-XNC

DDR4

SK hynix海力士

8Gb

x8

3200Mbps

FCBGA

MP

点击查看

K4RAH086VE-BCWM0VM

K4RAH086VE-BCWM0VM

DDR5

SAMSUNG三星

点击查看

K4RAH086VP-BCWM000

K4RAH086VP-BCWM000

DDR5

SAMSUNG三星

16 Gb

2G x 8

5600 Mbps

1.1 V

0 ~ 85 °C

82 FBGA

Mass Production

点击查看

K4RAH086VB-BCWMT00

K4RAH086VB-BCWMT00

DDR5

SAMSUNG三星

16 Gb

2G x 8

5600 Mbps

1.1 V

0 ~ 85 °C

82 FBGA

Mass Production

点击查看

K4RAH165VB-BCQK

K4RAH165VB-BCQK

DDR5

SAMSUNG三星

16 Gb

1G x 16

4800 Mbps

1.1 V

0 ~ 85 °C

106 FBGA

Mass Production

点击查看

K4AAG085WC-BCWE

K4AAG085WC-BCWE

DDR4

SAMSUNG三星

16 Gb

2G x 8

3200 Mbps

1.2 V

0 ~ 85 °C

78 FBGA

Sample

点击查看

K4A8G085WG-BCWE

K4A8G085WG-BCWE

DDR4

SAMSUNG三星

8 Gb

1G x 8

3200 Mbps

1.2 V

0 ~ 85 °C

78 FBGA

Mass Production

点击查看

K4A4G085WG-BCWE

K4A4G085WG-BCWE

DDR4

SAMSUNG三星

4 Gb

512M x 8

3200 Mbps

1.2 V

0 ~ 85 °C

78 FBGA

Mass Production

点击查看